Image pickup unit and method of manufacturing the same

ABSTRACT

An image pickup device and a method of the same are described herein. By way of first example, the image pickup device includes a seal member having a first surface, the first surface of the seal member including a concave portion, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member. By way of a second example, the image pickup device includes a seal member having a first surface, the first surface being a polished surface, and an optical device coupled to a second surface of the seal member, the second surface of the seal member being opposite from the first surface of the seal member.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 13/734,166, filed Jan. 4, 2013, which claims thebenefit of priority from prior Japanese Patent Application JP2012-003873, filed Jan. 12, 2012, the entire content of which is herebyincorporated by reference. Each of the above-referenced applications ishereby incorporated herein by reference in its entirety.

BACKGROUND

This technology relates to an image pickup unit in which an opticalsensor such as a charge coupling device (CCD) and a complementarymetal-oxide semiconductor (CMOS) image sensor (CIS) is configured as achip-scale package, and to a method of manufacturing the same.

As a simple method of packaging an optical sensor, a wafer chip scalepackage (WCSP) structure has been proposed.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary, and are intended toprovide further explanation of the technology as claimed.

SUMMARY

An image pickup device and a method of the same are described herein. Byway of first example, the image pickup device includes a seal memberhaving a first surface, the first surface of the seal member including aconcave portion, and an optical device coupled to a second surface ofthe seal member, the second surface of the seal member being oppositefrom the first surface of the seal member.

By way of a second example, the image pickup device includes a sealmember having a first surface, the first surface being a polishedsurface, and an optical device coupled to a second surface of the sealmember, the second surface of the seal member being opposite from thefirst surface of the seal member.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure, and are incorporated in and constitutea part of this specification. The drawings illustrate embodiments and,together with the specification, serve to explain the principles of thetechnology.

FIG. 1 is a diagram illustrating a basic structure of a WCSP structure.

FIG. 2 is a diagram illustrating a structure of a WCSP structure withouta gap.

FIGS. 3A and 3B are diagrams each illustrating a first configurationexample of an image pickup unit according to an embodiment of thedisclosure.

FIG. 4 is a diagram illustrating a configuration example of a colorfilter according to the embodiment.

FIGS. 5A, 5B and 5C are first diagrams for explaining a method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 6A, 6B and 6C are second diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 7A, 7B and 7C are third diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 8A, 8B and 8C are fourth diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 9A, 9B and 9C are fifth diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 10A, 10B and 10C are sixth diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 11A, 11B and 11C are seventh diagrams for explaining the method ofmanufacturing the image pickup unit of FIGS. 3A and 3B.

FIGS. 12A and 12B are diagrams for explaining a manufacturing method inwhich a glass is processed to allow an outer region of a glass wafer tobe higher in height than inner portion thereof, and a bonding process toa silicon substrate and the like are then performed.

FIGS. 13A and 13B are diagrams each illustrating a second configurationexample of the image pickup unit according to the embodiment.

FIGS. 14A and 14B are diagrams each illustrating a third configurationexample of the image pickup unit according to the embodiment.

FIGS. 15A, 15B, 15C and 15D are diagram for explaining a first method ofmanufacturing the image pickup unit of FIGS. 14A and 14B.

FIGS. 16A, 16B, 16C and 16D are diagram for explaining a second methodof manufacturing the image pickup unit of FIGS. 14A and 14B.

FIGS. 17A, 17B and 17C are diagram for explaining a third method ofmanufacturing the image pickup unit of FIGS. 14A and 14B.

FIGS. 18A, 18B and 18C are first diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 19A and 19B are second diagrams for specifically explaining thesecond method of manufacturing the image pickup unit of FIGS. 14A and14B.

FIGS. 20A, 20B and 20C are third diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 21A, 21B and 21C are fourth diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 22A, 22B and 22C are fifth diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 23A, 23B and 23C are sixth diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 24A, 24B and 24C are seventh diagrams for specifically explainingthe second method of manufacturing the image pickup unit of FIGS. 14Aand 14B.

FIGS. 25A and 25B are diagrams each illustrating a fourth configurationexample of the image pickup unit according to the embodiment.

DETAILED DESCRIPTION

Hereinafter, embodiments of the technology will be described withreference to drawings.

It is desirable to provide an image pickup unit and a method ofmanufacturing the same which are capable of preventing enlargement ofthe unit, complication of processes, and increase in cost, andsuppressing generation of scratches, cracks, and the like on a sealmember, as well as improving the characteristics and the manufacturingyield of the unit.

In Japanese Unexamined Patent Application Publication No. 2009-76629, asshown in the WCSP structure of FIG. 1, a structure including aprotection film 10 which has openings is described. The protection film10 has the openings in a region facing the optical element region (thelight receiving portion) of a surface (a front surface) of the sealglass 3, as illustrated by a dashed line in FIG. 1.

The protection film 10 is formed by using, for example, the followingconductive materials in consideration of electrostatic chuck and thelike in a wafer process. Specifically, the protection film 10 is formedof a high-resistance metal material (such as Ti, TiN, TiW, Ni, Cr, TaN,and CoWP) or a low-resistance metal material (such as Al, Al—Cu,Al—Si—Cu, Cu, Au, and Ag). Alternatively, the protection film 10 isformed of polycrystalline silicon, a polymer compound havingconductivity, or a conductive resin material such as aconductive-particle-containing epoxy resin and aconductive-particle-containing polyimide resin.

As described above, the protection film is formed on the outer region ofthe surface of the seal glass 3 so that a surface 3 a of a lightincident region of the seal glass 3 has a concave shape. Therefore, thesurface 3 a of the seal glass 3 is prevented from being directly touchedin a wafer process. Thus, it may be possible to suppress generation ofscratches, cracks, and the like on the seal glass 3, and to accordinglyimprove the characteristics and the manufacturing yield of the imagepickup unit.

FIG. 2 is a diagram illustrating another structure of the WCSPstructure. A WCSP structure 1A in FIG. 2 is configured by filling thegap 5 with the resin 4 in the WCSP structure 1 of FIG. 1. Therefore, theWCSP structure 1A is configured as a WCSP structure without a gap.Hereinafter, such a WCSP structure without a gap is referred to as acavity less WCSP structure in some cases.

Employing the cavity less WCSP structure without a gap enablessignificant reduction of thermal stress generated in a gap of the WCSPstructure which has the gap. Therefore, occurrence of warpage is allowedto be suppressed. Further, the cavity less WCSP structure is allowed tooptically suppress reflection generated on an interface of the gap(having a refractive index of 1) with use of a resin which has arefractive index of 1.5. Therefore, it is expected to increase in anamount of light received by the optical device 2.

FIGS. 3A and 3B are diagrams each illustrating a first configurationexample of an image pickup unit according to an embodiment of thedisclosure. FIG. 3A is a plan view illustrating a configuration examplein which a resin layer (an intermediate layer) is disposed on a firstsurface of a substrate, and FIG. 3B is a simplified side viewillustrating an overall configuration of the image pickup unit. In theembodiment, as an example of an optical device (an optical sensor), aCMOS image sensor (CIS) is employed.

An image pickup unit 100 of the embodiment basically has a WCSPstructure which is packaged in a size of an optical sensor chip. Theimage pickup unit 100 may employ a cavity structure in which a gap isformed between an optical element region (a light receiving portion) ofan optical device and a surface facing the light receiving portion, of aseal glass, or a cavity less WCSP structure without a gap. In theembodiment, the cavity less WCSP structure is described. In theembodiment, the first surface (a front surface) is a surface formed withthe light receiving portion of the optical device as the optical sensorof the image pickup unit, namely, a surface on a side from which imagelight of a subject enters. A second surface (a back surface) is asurface which does not receive light and is provided with connectionelectrodes such as solder balls (bumps), an interposer, and the like,namely, a surface opposite to the first surface.

The image pickup unit 100 includes an optical device 110, a seal member120, a resin layer 130 as an intermediate layer, connection pads 140 aselectrode pads or external connection terminals, via electrodes 150(150-1 and 150-2), and external connection terminals 160.

Incidentally, the resin layer 130 and the seal member 120 are eachformed of a material which is transparent to light and allows light topass therethrough. The refractive index of each of these materials ishigher than that of the air. For example, the resin layer 130 and theseal member 120 are each formed of a material having a refractive indexof about 1.5. In the configuration of FIGS. 3A and 3B, an example inwhich the seal member 120 is formed of a glass is illustrated. In thiscase, the seal member 120 may be formed as a seal glass or a coverglass. The resin layer 130 has a function as a seal member, in additionto a function as a protection film for the optical element region.

In the optical device 110, an optical element region 112 which functionsas the light receiving portion is formed on a first surface (a frontsurface) 111 a of a sensor substrate (a silicon substrate) 111. Theexternal connection terminals 160 such as bumps, which are electrodesconnected to the outside, are formed on a second surface (a backsurface) 111 b. In the optical device 110, the connection pads 140 whichserve as electrode pads (140-1 to 140-4) or external connectionterminals are formed on end portions (right and left end portions inFIGS. 3A and 3B) on the first surface 111 a of the sensor substrate 111.In the optical device 110, an insulating film 113 is formed in a regionexcept for filter portions of the optical element region 112, on thefirst surface 111 a of the sensor substrate 111. In the insulating film113, the connection pads 140 are embedded. Parts of the insulating film113 are opened to form openings 113-1 and 113-2 on the first surface 111a of the sensor substrate 111. A non-connection surface of theconnection pad 140 is exposed through the openings. In addition, theresin layer 130 is also formed inside the openings of the insulatingfilm 113, and the connection pads 140 are covered with the resin layer130, on the first surface 111 a of the sensor substrate 111. Theconnection pads 140 which are formed as the external connectionterminals on the first surface 111 a of the sensor substrate 111 of theoptical device 110 may be opened as wire bonding pads or may not beopened. Moreover, each of the connection pads 140 may not be a metallayer on an uppermost layer of stacked wirings in the optical device110. Note that the opening means a state where the insulating film 113is partially removed and the pad is accordingly exposed, and where testterminals and the like are directly connectable in manufacturing and thelike.

In the optical device 110, the via electrodes 150 (150-1 and 150-2) areformed by through silicon vias 114 which pass through the sensorsubstrate 111 from the first surface 111 a to the second surface 111 b.This enables bonding of a glass in a wafer state without wirings by awire bonding, in a clean room. Each of the via electrodes 150 (150-1 to150-4) is connected to the external connection terminal 160 on thesecond surface 111 b of the sensor substrate 111. The externalconnection terminal 160 is connected to a terminal of an externalreference potential (a ground potential) and the like through a wiring115.

The optical element region 112 as the light receiving portion is formedon the first surface 111 a of the sensor substrate 111, and has a lightreceiving surface (a pixel array portion) 1121 which includes aplurality of pixels (photodetection devices) arranged in a matrix. Inthe optical element region 112, a color filter 1122 is formed on a frontsurface side of the pixel array portion 1121. In the color filter 1122,color filters of red (R), green (G), and blue (B) which are threeprimary colors, are formed in an array as an on chip color filter (OCCF)with Bayer arrangement, for example, as illustrated in FIG. 4. However,the arrangement pattern of the color filters is not necessarily limitedto Bayer pattern. Incidentally, in the example of FIG. 4, an infraredcutoff filter (IRCF) 170 is formed to be overlaid on the color filter1122.

In the optical element region 112, a microlens array 1123 intended tocollect incident light in each pixel is disposed on a front surface sideof the color filter 1122. In the optical element region 112, ananti-reflection film and the like are formed on a front surface side ofthe microlens array 1123.

The seal member (the seal glass) 120 is formed so that an outer region1212 is formed to be higher in height than an inner region 1211 on thefront surface (the surface) 121 on a side from which the image light ofa subject enters. The inner region 1211 has an area larger than that ofa region facing the optical element region 112 of the optical device 110by a constant area. In other words, the seal glass 120 is formed to havea concave shape in which the central inner region 1211 is lower inheight than the outer region 1212 on the front surface 121.

Since the seal glass 120 has such a configuration, in a wafer process inmanufacturing, only the front surface 1212 a of the outer region 1212 onthe front surface 121 of the seal glass 120 is directly touched at thetime of being carried or being mounted on a stage or the like of aprocessing apparatus. Therefore, in the wafer process, a surface 1211 aof the inner region 1211 on the front surface 121 of the seal glass 120is prevented from being directly touched. As a result, generation ofscratches, cracks, and the like is suppressed, and the characteristicsand the manufacturing yield of the image pickup unit are improved. Asdescribed above, since the seal glass 120 of the embodiment is formed byrecessing the glass itself along the inner region 1211 without using aseparate member for recessing, the enlargement of the image pickup unit,the complication of processes, and the increase in cost are preventedwhile generation of scratches, cracks, and the like in the seal memberis suppressed. As a result, the seal glass 120 of the embodimentimproves the characteristics and the manufacturing yield of the imagepickup unit. A specific manufacturing method will be described in detaillater.

In addition, since the outer region 1212 has a depth D from the frontsurface 1212 a of the outer region 1212 to the surface 1211 a of theinner region 1211, the seal glass 120 of the embodiment exerts thefollowing functions and effects. The outer region 1212 is surrounded bythe air. Thus, the outer region 1212 functions as a so-called waveguide(an optical waveguide). Accordingly, light traveling toward the opticalelement region 112, of light which has entered the front surface 1212 aor the like is guided by the outer region 1212 for a predetermineddistance so as to go straight toward a region formed with the connectionpad 140 illustrated in FIG. 3B. Consequently, light which has enteredthe front surface 1212 a of the outer region 1212 which is higher inheight than the surface 1211 a of the inner region 1211 is preventedfrom becoming stray light to the optical element region 112. As aresult, the outer region 1212 contributes to prevention of lowering inthe sensitivity of the optical element region (the light receivingportion) and the manufacturing yield.

The resin layer 130 is formed to fill a gap between the first surface111 a formed with the optical element region 112 having the abovedescribed configuration, of the sensor substrate 111 and the surface 122facing the first surface 111 a, of the seal member (the seal glass) 120.In addition, as described above, the resin layer 130 is formed to fill aportion reaching the connection portion of the connection pad 140 in theopening formed in the insulating film 113. In other words, the imagepickup unit 100 of the embodiment is formed to have a so-called cavityless structure. Note that the thickness of the resin layer 130 is set toabout 10 μm to about 100 μm, for example. In addition, the thickness ofthe seal glass 120 is set to about 450 μm to about 800 μm, for example.

[Method of Manufacturing Image Pickup Unit of FIGS. 3A and 3B]

Next, a method of manufacturing the image pickup unit 100 having theabove-described structure will be described. FIGS. 5A, 5B, 5C, 6A, 6B,6C, 7A, 7B, 7C, 8A, 8B, 8C, 9A, 9B, 9C, 10A, 10B, 10C, 11A, 11B and 11Care diagrams for explaining the method of manufacturing the image pickupunit according to the embodiment.

(Step ST1)

As illustrated in FIGS. 5A and 5B, in a step ST1, a recessed portion DGGhaving the depth D is formed in a region to be the inner region 1211 onthe front surface 121A of a square glass substrate 120A which has beencleaned and is to be the seal glass 120. The outer region 1212 is formedin the periphery of the glass substrate 120A by the inner region 1211.In this case, for example, as illustrated in FIG. 5C, the recessedportion DGG is formed for each chip CP on the glass substrate 200according to a chip map.

(Step ST2)

As illustrated in FIG. 6A, in a step ST2, a sensor portion as theoptical element region 112, the connection pads 140, and the like areformed on the first surface 111 a of the silicon substrate (the sensorsubstrate) 111A, and then the insulating film 113 is formed. Then, theopenings 113-1 and 113-2 each reaching the connection pad 140 are formedin the insulating film 113. The openings are intended to measure sensorproperty in advance and select a favorable chip.

(Step ST3)

As illustrated in FIG. 6B, in a step ST3, on the first surface 111 aside of the silicon substrate 111A, a film 130A is formed to cover theoptical element region 112 and the insulating film 113, and to fill theopenings 113-1 and 113-2 so as to reach the connection pad 140. The film130A forms the resin layer 130 as the intermediate layer.

(Step ST4)

As illustrated in FIG. 6C, in a step ST4, the film 130A is bonded to asurface 122 not formed with the recessed portion DGG, of the glasssubstrate 120A illustrated in FIG. 5B. Specifically, in the step ST4,the glass substrate 120A formed with the recessed portion DGG is bonded,through the film 130A, to the optical device 110 including the opticalelement region 112 which is formed on the silicon substrate 111A. Nextand follow steps are a wiring formation process.

(Step ST5)

As illustrated in FIG. 7A, in a step ST5, the surface 121A side formedwith the recessed portion DGG of the glass substrate 120A is mounted ona processing apparatus. Then, the second surface 111 b of the siliconsubstrate 111A is abraded by back ground remove (BGR) and chemicalmechanical polishing (CMP), to the thickness where the via electrodesare allowed to be formed. For example, the silicon substrate 111A havingthe thickness of about 700 μm is abraded to the thickness of about 100μm to about 50 μm. As described above, in the manufacturing process,only the front surface 1212 a of the outer region 1212 of the frontsurface 121A of the glass substrate 120A is directly touched at the timeof being carried or being mounted on a stage of a processing apparatus.Therefore, in a wafer process, the surface 1211 a of the inner region1211 on the front surface 121 of the seal glass 120 is prevented frombeing directly touched. As a result, generation of scratches, cracks,and the like is suppressed, and the characteristics and themanufacturing yield of the image pickup unit are improved.

(Step ST6)

As illustrated in FIG. 7B, in a step ST6, a mask 210 is formed byphotolithography and the like in a predetermined position of the secondsurface 111 b side of the silicon substrate 111A, except forpredetermined positions 211 and 212 in which TSVs are to be formed.

(Step ST7)

As illustrated in FIG. 7C, in a step ST7, TSVs 213 and 214 each reachingthe connection pad 140 are formed in the predetermined positions 211 and212 on the second surface 111 b side of the silicon substrate 111A byetching. After that, the mask 210 is removed.

(Step ST8)

As illustrated in FIG. 8A, in a step ST8, for example, a oxidizedinsulating film 215 is formed to have a thickness of about 10 μm on theentire surface including the inside of the TSVs 213 and 214 of thesecond surface 111 b side of the silicon substrate 111A.

(Step ST9)

As illustrated in FIG. 8B, in a step ST9, etching is performed on thesecond surface 111 b side of the silicon substrate 111A to remove theinsulating film 215 formed on the bottom of each of the TSVs 213 and214. As a result, the surfaces of the connection pads 140-1 and 140-2 inthe TSVs 213 and 214 are exposed. The remaining insulating film 215 hasa thickness smaller than 10 μm.

(Step ST10)

As illustrated in FIG. 8C, in a step ST10, a seed layer 216 as aconductive layer is formed to have a thickness of about 0.1 μm to about1 μm on the entire surface including the inside of the TSVs 213 and 214of the second surface 111 b side of the silicon substrate 111A. The seedlayer 216 is formed of a stacked film of, for example, titanium (Ti) andcopper (Cu).

(Step ST11)

As illustrated in FIG. 9A, in a step ST11, a resist 217 is bonded to theentire surface including above the TSVs 213 and 214 of the secondsurface 111 b of the silicon substrate 111A.

(Step ST12)

As illustrated in FIG. 9B, in a step ST12, the resist 217 is removedfrom the inside of the TSVs 213 and 214 and the surrounding regions ofthe TSVs 213 and 214 on the second surface 111 b of the siliconsubstrate 111A.

(Step ST13)

As illustrated in FIG. 9C, in a step ST13, a wiring layer 218 is formedto have a thickness of about 5 μm inside the TSVs 213 and 214 and in thesurrounding regions of the TSVs 213 and 214 on the second surface 111 bof the silicon substrate 111A. The wiring layer 218 is formed of, forexample, Cu. Then, the wiring 115 in FIG. 3B is formed by the wiringlayer 218 and the seed layer 216.

(Step ST14)

As illustrated in FIG. 10A, in a step ST14, the resist 217 remaining onthe second surface 111 b of the silicon substrate 111A is removed.

(Step ST15)

As illustrated in FIG. 10B, in a step ST15, the seed layer 216 isremoved, by etching, from a region in which the wiring layer 218 is notformed and the boundary region thereof on the second surface 111 b ofthe silicon substrate 111A.

(Step ST16)

As illustrated in FIG. 10C, in a step ST16, a solder mask 219 is formedon the entire surface including above the TSVs 213 and 214 on the secondsurface 111 b of the silicon substrate 111A.

(Step ST17)

As illustrated in FIG. 11A, in a step ST17, openings 220-1 and 220-2each reaching the wiring layer 218 are formed in the solder mask 219 ina region which is adjacent to the region inner than the region formedwith the TSVs 213 and 214 on the second surface 111 b of the siliconsubstrate 111A.

(Step ST18)

As illustrated in FIG. 11B, in a step ST18, solders 221-1 and 221-2 areprinted or solder balls are provided in the openings 220-1 and 220-2 onthe second surface 111 b of the silicon substrate 111A so as to reachthe wiring layer 218 and to be exposed from the openings 220-1 and220-2.

(Step ST19)

As illustrated in FIG. 11C, in a step ST19, solder balls 222-1 and 222-2are formed by reflow. The solder balls 222-1 and 222-2 form the externalconnection terminals 160 in FIG. 3B.

In this way, the manufacturing of the image pickup unit 100 iscompleted.

According to the embodiment, the seal glass 120 is formed to have aconcave shape in which the central inner region 1211 is lower in heightthan the outer region 1212 on the front surface 121. Since the sealglass 120 has such a configuration, in a wafer process in manufacturing,only the front surface 1212 a of the outer region 1212 on the frontsurface 121 of the seal glass 120 is directly touched at the time ofbeing carried or being mounted on a stage or the like of a processingapparatus. Therefore, in the wafer process, the surface 1211 a of theinner region 1211 on the front surface 121 of the seal glass 120 isprevented from being directly touched. As a result, generation ofscratches, cracks, and the like is suppressed, and the characteristicsand the manufacturing yield of the image pickup unit are improved. Asdescribed above, since the seal glass 120 of the embodiment is formed byrecessing the glass itself along the inner region 1211 without using aseparate member for recessing, the enlargement of the image pickup unit,the complication of processes, and the increase in cost are preventedwhile generation of scratches, cracks, and the like in the seal memberis suppressed. Consequently, according to the embodiment, it may bepossible to improve the characteristics and the manufacturing yield ofthe image pickup unit.

As described above, in the manufacturing process, the recessed portionDGG with the depth D is formed in a region to be the inner region 1211on the front surface 121A of the glass substrate 120A. Therefore, onlythe front surface 1212 a of the outer region 1212 on the front surface121A of the glass substrate 120A is directly touched at the time ofbeing carried or being mounted on a stage or the like of a processingapparatus.

Accordingly, the surface 1211 a of the inner region 1211 on the frontsurface 121A of the glass substrate 120A is prevented from beingdirectly touched in the wafer process. Thus, generation of scratches,cracks, and the like is suppressed, and the characteristics and themanufacturing yield of the image pickup unit are improved.

Incidentally, in the above-described manufacturing method, the recessedportion DGG is formed for each chip CP on the glass substrate 200according to a chip map. For example, as illustrated in FIGS. 12A and12B, in the present technology, a glass may be processed so that anouter region 310 of a glass wafer 300 is higher in height than innerside, and then each of processes such as bonding with the siliconsubstrate 111 as described above may be performed. Also in themanufacturing method, the surface 1211 a of the inner region 1211 on thefront surface 121A of the glass substrate 120A is prevented from beingdirectly touched in the wafer process. Therefore, generation ofscratches, cracks, and the like is suppressed, and the characteristicsand the manufacturing yield of the image pickup unit are improved.

FIGS. 13A and 13B are diagrams each illustrating a second configurationexample of the image pickup unit according to the embodiment. FIG. 13Ais a plan view illustrating a configuration example in which a resinlayer (an intermediate layer) is provided on the first surface of thesubstrate, and FIG. 13B is a simplified side view illustrating anoverall configuration of the image pickup unit.

An image pickup unit 100B is different from the image pickup unit 100 ofFIGS. 3A and 3B in the following points. In the image pickup unit 100B,openings intended to fill a resin layer 130B as an intermediate layerare not formed in an insulating film 113B. Therefore, the image pickupunit 100B does not have a configuration in which the connection pads 140are connected to the resin layer 130B.

As for a manufacturing method, steps are performed in a similar mannerto the steps illustrated in FIGS. 5A, 5B, 5C, 6A, 6B, 6C, 7A, 7B, 7C,8A, 8B, 8C, 9A, 9B, 9C, 10A, 10B, 10C, 11A, 11B and 11C, except that thestep of forming the openings in the step ST2 described with reference toFIG. 6A is unnecessary.

Other configurations are similarly to those of the image pickup unit 100of FIGS. 3A and 3B, and effects similar to those of the image pickupunit 100 of FIGS. 3A and 3B described above are obtainable also in theimage pickup unit 100B.

FIGS. 14A and 14B are diagrams each illustrating a third configurationexample of the image pickup unit according to the embodiment. FIG. 14Ais a plan view illustrating a configuration example in which a resinlayer (an intermediate layer) is provided on a first surface of asubstrate, and FIG. 14B is a simplified side view illustrating anoverall configuration of the image pickup unit.

An image pickup unit 100C is different from the image pickup unit 100 ofFIGS. 3A and 3B in the following points. In the image pickup unit 100C,the recessed portion DGG is not formed on a front surface 121C of a sealglass 120C. In other words, in the image pickup unit 100C, the frontsurface 121C of the seal glass 120C is not processed and remains flat.

Therefore, in the manufacturing method, when the glass side is mountedas it is on a stage or the like of a processing apparatus, the surfaceof the glass substrate is directly touched, thereby causing scratches,cracks, and the like of the glass substrate. Thus, when the image pickupunit 100C with the configuration of FIGS. 14A and 14B is manufactured,instead of formation of a recessed portion on the glass substrate, anyof methods illustrated in FIGS. 15A, 15B, 15C,15D, 16A, 16B, 16C,16D,17A, 17B and FIG. 17 is employed.

[Method of Manufacturing Image Pickup Unit of FIGS. 14A and 14B]

In the manufacturing method of FIGS. 15A, 15B, 15C and 15D, asillustrated in FIG. 15A, the glass substrate 120C is bonded, with use ofan adhesive, to the optical device 110 including the optical elementregion 112 formed on the silicon substrate 111A. Next, as illustrated inFIG. 15B, a support substrate 400 as a support functional board istemporarily bonded to the front surface 121C with use of an adhesive410. Subsequently, as illustrated in FIG. 15C, basically, the processessuch as the formation process of the TSVs and the formation process ofthe solder balls are performed, and then, the temporarily-bonded supportsubstrate 400 is detached as illustrated in FIG. 15D. Note that thesupport substrate 400 is formed of Si or a glass substrate.

In the manufacturing method of FIGS. 16A, 16B, 16C and 16D, asillustrated in FIG. 16A, the glass substrate 120C is bonded, with use ofan adhesive, to the optical device 110 including the optical elementregion 112 formed on the silicon substrate 111A. Next, as illustrated inFIG. 16B, a protection film 500 as a support functional board istemporarily bonded to the front surface 121C with use of an adhesive510. Subsequently, as illustrated in FIG. 16C, basically, the processessuch as the formation process of the TSVs and the formation process ofthe solder balls are performed, and then, the temporarily-bondedprotection film 500 is detached as illustrated in FIG. 16D.

In the manufacturing method of FIGS. 17A, 17B and 17C, as illustrated inFIG. 17A, the glass substrate 120C is bonded, with use of an adhesive,to the optical device 110 including the optical element region 112formed on the silicon substrate 111A. Subsequently, as illustrated inFIG. 17B, basically, the processes such as the formation process of theTSVs and the formation process of the solder balls are performed. Afterthat, as illustrated in FIG. 17C, the front surface 121C of the glasssubstrate 120C is polished by a polisher 600.

The polishing of the glass may be performed after the support substrate400 or the protection film 500 is detached in the method of FIGS. 15A,15B, 15C, 15D, 16A, 16B, 16C and 16D.

Although some portions will be described again, the method ofmanufacturing the image pickup unit 100C of FIGS. 14A and 14B will bespecifically described below with reference to FIGS. 18A, 18B, 18C, 19A,19B 20A, 20B, 20C, 21A, 21B, 21C, 22A, 22B, 22C, 23A, 23B, 23C, 24A, 24Band FIG. 24C by taking the case where the protection film 500 is used,as an example.

FIGS. 18A, 18B, 18C, 19A, 19B 20A, 20B, 20C, 21A, 21B, 21C, 22A, 22B,22C, 23A, 23B, 23C, 24A, 24B and FIG. 24C are diagrams for specificallyexplaining a second method of manufacturing the image pickup unit ofFIGS. 14A and 14B. Note that, in the following description, likenumerals are used to designate substantially like components of FIGS.5A, 5B, 5C, 6A, 6B, 6C, 7A, 7B, 7C, 8A, 8B, 8C, 9A, 9B, 9C, 10A, 10B,10C, 11A, 11B, 11C and FIGS. 16A, 16B, 16C and 16D, for the sake offacilitating the understanding.

(Step ST21)

As illustrated in FIG. 18A, in a step ST21, the square glass substrate120C to be the seal glass 120 is prepared, and then the glass substrate120C is cleaned.

(Step ST22)

As illustrated in FIG. 18B, in a step ST22, the sensor portion which isthe optical element region 112, the connection pads 140, and the likeare formed on the first surface 111 a of the silicon substrate (thesensor substrate) 111A, and the insulating film 113 is then formed.After that, the openings 113-1 and 113-2 each reaching the connectionpad 140 are formed in the insulating film 113.

(Step ST23)

As illustrated in FIG. 18C, in a step ST23, the film 130A is formed onthe first surface 111 a of the silicon substrate 111A to cover theoptical element region 112 and the insulating film 113 as well as tofill the openings 113-1 and 113-2 so as to reach the connection pad 140.The film 130A forms the resin layer 130 as the intermediate layer.

(Step ST24)

As illustrated in FIG. 19A, in a step ST24, the film 130A is bonded tothe surface 122 which is not to be the front surface of the glasssubstrate 120C. In other words, in the step ST24, the glass substrate120C is bonded through the film 130A to the optical device 110 includingthe optical element region 112 which is formed on the silicon substrate111A. The step corresponds to a bonding process.

(Step ST25)

As illustrated in FIG. 19B, in a step ST25, the protection film 500 istemporarily bonded, with use of the adhesive 510, to the surface 121Cwhich is a front surface on a light incident side of the glass substrate120C. Note that, in the description, although the protection film isbonded corresponding to FIGS. 16A, 16B, 16C and 16D, if the methodcorresponds to FIGS. 15A, 15B, 15C and 15D, the support substrate 400 istemporarily bonded with use of the adhesive 410. The step corresponds tothe temporal bonding process. The bonding process in the step ST24 andthe temporal bonding process in the step ST25 may be performed in anyorder. Next and follow steps correspond to a wiring formation process.

(Step ST26)

As illustrated in FIG. 20A, in a step ST26, the surface 121A side towhich the protection film 500 is bonded, of the glass substrate 120C ismounted on a processing apparatus. Then, the second surface 111 b of thesilicon substrate 111A is abraded by BGR and CMP, to the thickness wherevia electrodes are allowed to be formed. For example, the siliconsubstrate 111A having the thickness of about 700 μm is abraded to thethickness of about 100 μm to about 50 μm. As described above, in themanufacturing process, only the protection film 500 bonded to the frontsurface 121C of the glass substrate 120C is directly touched at the timeof being carried or being mounted on a stage or the like of a processingapparatus. Therefore, in a wafer process, the surface 121C of the glasssubstrate 120C is prevented from being directly touched. As a result,generation of scratches, cracks, and the like is suppressed, and thecharacteristics and the manufacturing yield of the image pickup unit areimproved.

(Step ST27)

As illustrated in FIG. 20B, in a step ST27, the mask 210 is formed byphotolithography and the like in a predetermined position of the secondsurface 111 b of the silicon substrate 111A, except for thepredetermined positions 211 and 212 in which the TSVs are to be formed.

(Step ST28)

As illustrated in FIG. 20C, in a step ST28, the TSVs 213 and 214 eachreaching the connection pad 140 are formed in the predeterminedpositions 211 and 212 on the second surface 111 b of the siliconsubstrate 111A by etching. After that, the mask 210 is removed. Notethat in the processing of the step ST28, the protection film 500 or thesupport substrate 400 is detached once in some cases in order toeliminate influence of electrostatic chuck (ESC).

(Step ST29)

As illustrated in FIG. 21A, in a step ST29, for example, the oxidizedinsulating film 215 is formed to have a thickness of about 10 μm on theentire surface including the inside of the TSVs 213 and 214 of thesecond surface 111 b of the silicon substrate 111A. Note that, also inthe process of the step ST29, the protection film 500 or the supportsubstrate 400 is detached once in some cases in consideration of processthermal tolerance.

(Step ST30)

As illustrated in FIG. 21B, in a step ST30, etching is performed on thesecond surface 111 b of the silicon substrate 111A to remove theinsulating film 215 formed on the bottom of each of the TSVs 213 and214. As a result, the surfaces of the connection pads 140-1 and 140-2 inthe TSVs 213 and 214 are exposed. The remaining insulating film 215 hasa thickness smaller than 10 μm.

(Step ST31)

As illustrated in FIG. 21C, in a step ST31, the seed layer 216 as aconductive layer is formed to have a thickness of about 0.1 μm to about1 μm on the entire surface including the inside of the TSVs 213 and 214of the second surface 111 b of the silicon substrate 111A. The seedlayer 216 is formed of a stacked film of, for example, titanium (Ti) andcopper (Cu). Note that, also in the process of the step ST31, theprotection film 500 or the support substrate 400 is detached once insome cases in order to eliminate influence of ESC.

(Step ST32)

As illustrated in FIG. 22A, in a step ST32, the resist 217 is bonded tothe entire surface including above the TSVs 213 and 214 on the secondsurface 111 b of the silicon substrate 111A. Incidentally, if theprotection film 500 or the support substrate 400 has been detached oncein the steps ST28 to ST31, the protection film 500 or the supportsubstrate 400 is bonded again.

(Step ST33)

As illustrated in FIG. 22B, in a step ST33, the resist 217 is removedfrom the inside of the TSVs 213 and 214 and the surrounding regions ofthe TSVs 213 and 214 on the second surface 111 b of the siliconsubstrate 111A.

(Step ST34)

As illustrated in FIG. 22C, in a step ST34, the wiring layer 218 isformed to have a thickness of about 5 μm inside the TSVs 213 and 214 andin the surrounding regions of the TSVs 213 an 214 on the second surface111 b of the silicon substrate 111A. The wiring layer 218 is formed of,for example, Cu. Then, the wiring 115 in FIG. 3B is formed by the wiringlayer 218 and the seed layer 216.

(Step ST35)

As illustrated in FIG. 23A, in a step ST35, the resist 217 remaining onthe second surface 111 b of the silicon substrate 111A is removed.

(Step ST36)

As illustrated in FIG. 23B, in a step ST36, the seed layer 216 isremoved, by etching, from a region in which the wiring layer 218 is notformed and the boundary region thereof on the second surface 111 b ofthe silicon substrate 111A.

(Step ST37)

As illustrated in FIG. 23C, in a step ST37, the solder mask 219 isformed on the entire surface including above the TSVs 213 and 214 on thesecond surface 111 b of the silicon substrate 111A.

(Step ST38)

As illustrated in FIG. 24A, in a step ST38, the openings 220-1 and 220-2each reaching the wiring layer 218 are formed in the solder mask 219 ina region which is adjacent a region inner than the region formed withthe TSVs 213 and 214 on the second surface 111 b of the siliconsubstrate 111A.

(Step ST39)

As illustrated in FIG. 24B, in a step ST39, the solders 221-1 and 221-2are printed in the openings 220-1 and 220-2 on the second surface 111 bof the silicon substrate 111A so as to reach the wiring layer 218 and tobe exposed from the openings 220-1 and 220-2.

(Step ST40)

As illustrated in FIG. 24C, in a step ST40, the solder balls 222-1 and222-2 are formed by reflow. The solder balls 222-1 and 222-2 form theexternal connection terminals 160 in FIG. 14B.

After the reflow, a step of polishing the glass substrate 120A may beadded. In this case, a protection tape protecting the solder balls isput on the solder balls because the polishing of the glass substrate120A is performed in a state where the solder balls are located on adownside. The protection tape is detached after the polishing is ended.

In this way, the manufacturing of the image pickup unit 100C iscompleted.

According to the embodiment, the support substrate 400 or the protectionfilm 500 is temporarily bonded on the front surface 121C of the glasssubstrate 120C with an adhesive in the manufacturing process, or thefront surface 121C is polished after the manufacturing process.Accordingly, in the wafer process in manufacturing, only the supportsubstrate or the protection film bonded to the front surface of the sealglass 120 is directly touched at the time of being carried or beingmounted on a stage or the like of a processing apparatus. Therefore, inthe wafer process, the front surface 121 of the seal glass 120 isprevented from being directly touched. As a result, generation ofscratches, cracks, and the like is suppressed, and the characteristicsand the manufacturing yield of the image pickup unit are improved. Asdescribed above, since the seal glass 120 of the embodiment is formed byrecessing the glass itself along the inner region 1211 without using aseparate member for recessing, the enlargement of the image pickup unit,the complication of processes, and the increase in cost are preventedwhile generation of scratches, cracks, and the like in the seal memberis suppressed. As a result, according to the embodiment, it may bepossible to improve the characteristics and the manufacturing yield ofthe image pickup unit.

FIGS. 25A and 25B are diagrams each illustrating a fourth configurationexample of the image pickup unit according to the embodiment. FIG. 25Ais a plan view illustrating a configuration example in which a resinlayer (an intermediate layer) is provided on a first surface of asubstrate, and FIG. 25B is a simplified side view illustrating anoverall configuration of the image pickup unit.

An image pickup unit 100D is different from the image pickup unit 100Cof FIGS. 14A and 14B in the following points. In the image pickup unit100D, openings intended to fill a resin layer 130D as an intermediatelayer are not formed in an insulating film 113D. Therefore, the imagepickup unit 100D does not have a configuration in which the connectionpads 140 are connected to the resin layer 130D.

As for a manufacturing method, steps are performed in a similar mannerto the steps illustrated in FIGS. 18A, 18B, 18C, 19A, 19B 20A, 20B, 20C,21A, 21B, 21C, 22A, 22B, 22C, 23A, 23B, 23C, 24A, 24B, 24C, 25A, 25B andFIG. 25C, except that the step of forming the openings in the step ST22described with reference to FIG. 18B is unnecessary.

Other configurations are similar to those of the image pickup unit 100Cof FIGS. 14A and 14B, and effects similar to those of the image pickupunit 100C of FIGS. 14A and 14B described above are obtainable also inthe image pickup unit 100D.

Note that the technology may be configured as follows.

An image pickup device comprising: a seal member having a first surface,the first surface of the seal member including a concave portion; and anoptical device coupled to a second surface of the seal member, thesecond surface of the seal member being opposite from the first surfaceof the seal member.

The concave portion of the seal member may include an outer region andan inner region, the outer region protruding beyond the inner region bya distance (D) in a direction perpendicular to the second surface of theseal member.

The optical device may include an optical element region formed on afirst surface of a substrate, the first surface of the substrate facingtoward the seal member and the optical element region being configuredto perform photoelectric conversion.

The second surface of the seal member may be adhered to the opticaldevice by a resin layer.

The optical device may include a connection pad formed on the firstsurface of the substrate, and the connection pad may be connected to anexternal connection terminal formed on a second surface of the substratethrough a via electrode, the second surface of the substrate beingopposite from the first surface of the substrate.

An insulating layer may be formed on the first surface of the substrate,and a portion of the insulating layer is formed between the connectionpad and the resin layer.

The connection pad may be in direct contact with the resin layer.

The outer region may protrude beyond the inner region at a step having alateral wall, the lateral wall being nearly parallel to the directionperpendicular to the first surface of the seal member.

The concave portion may include an outer region and an inner region onthe first surface of the seal member, the outer region protruding beyondthe inner region by a distance (D) in a direction perpendicular to thefirst surface of the seal member, and the inner surface region may alignwith the optical element region in the direction perpendicular to thefirst surface of the seal member.

A method for making an image pickup device, the method comprising thesteps of: forming a concave portion on a first surface of a seal member;and coupling an optical device to a second surface of the seal member,the second surface of the seal member being opposite from the firstsurface of the seal member.

In the step of forming the concave portion, an outer region and an innerregion may be formed on the first surface of the seal member, the outersurface region being formed to protrude beyond the inner surface regionby a distance (D) in a direction perpendicular to the second surface ofthe seal member.

In the method for making an image pickup device, the optical device mayinclude an optical element region formed on a first surface of asubstrate, the optical element region being configured to performphotoelectric conversion and the first surface of the substrate facingtoward the seal member.

In the step of coupling the optical device to the second surface of theseal member, the second surface of the seal member may be adhered to theoptical device by a resin layer.

In the method for making an image pickup device, the optical device mayinclude a connection pad formed on the first surface of the substrate,and the connection pad may be connected to an external connectionterminal formed on a second surface of the substrate through a viaelectrode, the second surface of the substrate being opposite from thefirst surface of the substrate.

In the method for making an image pickup device, an insulating layer maybe formed on the first surface of the substrate, and a portion of theinsulating layer is formed between the connection pad and the resinlayer.

In the method for making an image pickup device, the connection pad maybe in direct contact with the resin layer.

In the step of forming the concave portion, the outer region may beformed to protrude beyond the inner region at a step having a lateralwall, the lateral wall being nearly parallel to the directionperpendicular to the first surface of the seal member.

In the step of forming the concave portion, the concave portion may beformed to include an outer region and an inner region on the firstsurface of the seal member, the outer region protruding beyond the innerregion by a distance (D) in a direction perpendicular to the firstsurface of the seal member, and the inner surface region may align withthe optical element region in the direction perpendicular to the firstsurface of the seal member.

A method for making a second image pickup device, the method comprisingthe steps of: coupling a second surface of a seal member to an opticaldevice; coupling a first surface of the seal member to a protectivemember, the first surface of the seal member being opposite from thesecond surface of the seal member; removing the protective member.

The method for making the second image pickup device may furthercomprise the step of performing fabrication processing on the imagepickup device, wherein the step of performing processing on the imagepickup device is performed after the step of coupling the first surfaceof the seal member to the protective member.

In the method for making the second image pickup device, the protectivemember may be a support substrate.

In the second method for making the second image pickup device, theprotective member may be a protective film.

The method for making the second image pickup device may furthercomprise the step of polishing the first surface of the seal memberafter the step of removing the protective member.

The second image device may comprise: a seal member having a firstsurface, wherein the first surface is a polished surface; and an opticaldevice coupled to a second surface of the seal member, the secondsurface of the seal member being opposite from the first surface of theseal member.

Another image pickup unit comprises: an optical device including anoptical element region, wirings, and external connection terminals, theoptical element region being provided on a first surface of a substrateand functioning as a light receiver, and the wirings and the externalconnection terminals being provided on a second surface opposite to thefirst surface of the substrate; and an optically-transparent seal memberprovided to cover a region including the optical element region of theoptical device, thereby to protect the optical element region, whereinthe region including the optical element region of the optical device isbonded to a back surface of the seal member, the back surface beingopposite to a front surface as a light incident surface of the sealmember, and the seal member is provided with an inner region on thefront surface, the inner region being defined as a region correspondingto the optical element region of the optical device and being lower inheight than an outer region on the front surface.

The optical device may include connection pads provided on the firstsurface along the optical element region, and via electrodes eachpassing through the substrate from the second surface to the firstsurface to be connected to the connection pads and each being connectedto the wirings on the second surface.

The another image pickup unit comprises may further comprise anintermediate layer provided between the optical element region on thefront surface of the optical device and the back surface of the sealmember at least in a region corresponding to the optical element region,the intermediate layer wholly bonding the optical element region of theoptical device and the back surface of the seal member.

The optical device may include an insulating film provided on the firstsurface of the substrate, the insulating film may include openings eachreaching the connection pad from the second surface side, and theopenings may be filled with the intermediate layer to allow theconnection pads to be in contact with the intermediate layer.

Another image pickup unit comprises: an optical device including anoptical element region, wirings, and external connection terminals, theoptical element region being provided on a first surface of a substrateand functioning as a light receiver, and the wirings and the externalconnection terminals being provided on a second surface opposite to thefirst surface of the substrate; an optically-transparent seal memberprovided to cover a region including the optical element region of theoptical device, thereby to protect the optical element region; anintermediate layer provided between the optical element region on afront surface as a light incident surface of the optical device and aback surface of the seal member at least in a region corresponding tothe optical element region, the intermediate layer wholly bonding theoptical element region of the optical device and the back surface of theseal member, the back surface being opposite to the front surface of theseal member; connection pads provided on the first surface along theoptical element region; via electrodes each passing through thesubstrate from the second surface to the first surface to be connectedto the connection pads and each being connected to the wirings on thesecond surface; and an insulating film provided on the first surface ofthe substrate, wherein the insulating film includes openings eachreaching the connection pad from the second surface side, and theopenings is filled with the intermediate layer to allow the connectionpads to be in contact with the intermediate layer.

The front surface of the seal member may be polished.

In another method of manufacturing an image pickup unit, the methodcomprises: forming a recessed portion on a front surface as a lightincident surface of an optically-transparent seal member which isprovided to protect an optical element region of an optical device, theoptical element region being provided on a first surface of a substrateand functioning as a light receiver, the recessed portion being formedin an inner region defined as a region corresponding to the opticalelement region of the optical device and being lower in height than anouter region on the front surface; bonding a region including theoptical element region of the optical device to a back surface of theseal member, the back surface being opposite to the front surface of theseal member; and forming wirings and external connection terminals on asecond surface opposite to the first surface of the substrate of theoptical device, while supporting the front surface of the seal member.

The another method of manufacturing the image pickup unit may furthercomprise abrading the second surface of the substrate to a thicknesswhich allows via electrodes to be formed, before formation of thewirings, wherein via electrodes are formed in the formation of thewirings, the via electrodes each passing through the substrate from thesecond surface to the first surface to be connected to connection padsand each being connected to the wirings on the second surface, theconnection pads being provided on the first surface along the opticalelement region.

The another method of manufacturing the image pickup unit wherein anintermediate layer is formed to fill a gap between the optical elementregion on the front surface of the optical device and the back surfaceof the seal member at least in a region corresponding to the opticalelement region, the intermediate layer allowing the optical elementregion of the optical device to be bonded to the back surface of theseal member.

The another method of manufacturing the image pickup unit may furthercomprise: providing an insulating film on the first surface of thesubstrate of the optical device; and forming openings on the insulatingfilm before the bonding of the optical element region of the opticaldevice and the back surface of the seal member, the openings eachreaching the connection pad from the second surface side of thesubstrate, wherein the intermediate layer is filled in the openings tobe in contact with the connection pads in the bonding.

Another method of manufacturing an image pickup unit, the methodcomprising: (A) bonding a region including an optical element region ofan optical device to a back surface of an optically-transparent sealmember, the optical element region being provided on a first surface ofa substrate and functioning as a light receiver, the seal memberprovided to cover a region including the optical element region of theoptical device, thereby to protect the optical element region, the backsurface being opposite to a front surface as a light incident surface ofthe seal member; (B) temporarily bonding a support functional board as aprotection member to the front surface of the seal member; and (C)forming wirings and external connection terminals on a second surfaceopposite to the first surface of the substrate of the optical device,while supporting the support functional board on the front surface ofthe seal member, wherein the (A) and the (B) are performed in any order.

Another method of manufacturing an image pickup unit, the methodcomprising: bonding a side provided with an optical element region of anoptical device to a back surface of an optically-transparent sealmember, the optical element region being provided on a first surface ofa substrate and functioning as a light receiver, the seal memberprotecting the side provided with the optical element region of theoptical device, the back surface being opposite to a front surface on alight incident side of the seal member; and forming wirings and externalconnection terminals on a second surface opposite to the first surfaceof the substrate of the optical device, while supporting the frontsurface of the seal member, wherein the front surface of the seal memberis polished after the external connection terminals are formed information of the wirings.

The another method of manufacturing an image pickup unit may furthercomprise abrading the second surface of the substrate to a thicknesswhich allows via electrodes to be formed, before formation of thewirings, wherein via electrodes are formed in the formation of thewirings, the via electrodes each passing through the substrate from thesecond surface to the first surface to be connected to connection padsand each being connected to the wirings on the second surface, theconnection pads being provided on the first surface along the opticalelement region.

The another method of manufacturing the image pickup unit wherein anintermediate layer is formed to fill a gap between the optical elementregion on the front surface of the optical device and the back surfaceof the seal member at least in a region corresponding to the opticalelement region, the intermediate layer allowing the optical elementregion of the optical device to be bonded to the back surface of theseal member.

The another method of manufacturing an image pickup unit may furthercomprise providing an insulating film on the first surface of thesubstrate of the optical device; and forming openings on the insulatingfilm before the bonding of the optical element region of the opticaldevice and the back surface of the seal member, the openings eachreaching the connection pad from the second surface side of thesubstrate, wherein the intermediate layer is filled in the openings tobe in contact with the connection pads in the bonding.

The another method of manufacturing the image pickup unit wherein viaelectrodes are formed in the formation of the wirings, the viaelectrodes each passing through the substrate from the second surface tothe first surface to be connected to connection pads and being connectedto the wirings on the second surface, the connection pads being providedon the first surface along the optical element region, the supportfunctional board temporarily bonded is detached after formation of thevia electrodes, and the support functional board is temporarily bondedagain before formation of wirings.

The another method of manufacturing the image pickup unit wherein information of the wirings, the support functional board temporarilybonded is detached after formation of some wirings, and the supportfunctional board is temporarily bonded again before formation of otherwirings.

The another method of manufacturing the image pickup unit wherein information of the wirings, the front surface of the seal member ispolished after the external connection terminals are formed and thesupport functional board is detached.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2012-003873 filedin the Japan Patent Office on Jan. 12, 2012, the entire content of whichis hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations, and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. An image pickup device, comprising: anoptically-transparent seal member that comprises a first surface and asecond surface, wherein the second surface is opposite to the firstsurface, and wherein the optically-transparent seal member includes anouter region and an inner region; an optical device coupled to thesecond surface, wherein the optical device includes an optical sensorwith a light receiving surface; and a resin layer configured to fill agap between the light receiving surface and the second surface.
 2. Theimage pickup device according to claim 1, wherein the outer regionprotrudes beyond the inner region by a distance (D) in a directionperpendicular to the second surface.
 3. The image pickup deviceaccording to claim 1, wherein the optical sensor includes an opticalelement region on a third surface of a substrate, wherein the firstsurface of the substrate faces toward the optically-transparent sealmember, and wherein the optical element region is configured forphotoelectric conversion.
 4. The image pickup device according to claim3, wherein the second surface is adhered to the optical device by theresin layer.
 5. The image pickup device according to claim 4, whereinthe optical device further includes a connection pad on the thirdsurface of the substrate, and the connection pad is connected to anexternal connection terminal on a fourth surface of the substratethrough a via-electrode, wherein the fourth surface of the substrate isopposite from the third surface of the substrate.
 6. The image pickupdevice according to claim 5, wherein an insulating layer is on the thirdsurface of the substrate, and a portion of the insulating layer isbetween the connection pad and the resin layer.
 7. The image pickupdevice according to claim 5, wherein the connection pad is in directcontact with the resin layer.
 8. The image pickup device according toclaim 2, wherein the outer region protrudes beyond the inner region at astep that has a lateral wall, and wherein the lateral wall issubstantially parallel to the direction perpendicular to the firstsurface.
 9. The image pickup device according to claim 3, wherein thefirst surface comprises a concave portion that includes the outer regionand the inner region on the first surface, wherein the outer regionprotrudes beyond the inner region by a distance (D) in a directionperpendicular to the first surface, and wherein the inner region alignswith the optical element region in the direction perpendicular to thefirst surface.
 10. The image pickup device according to claim 1, whereinthe first surface is larger than the second surface.
 11. The imagepickup device according to claim 1, wherein the optically-transparentseal member has a thickness in range of 450 μm to 800 μm and arefractive index of about 1.5.
 12. The image pickup device according toclaim 1, wherein the resin layer has a thickness in range of 10 μm to100 μm.
 13. The image pickup device according to claim 1, wherein thefirst region comprises the outer region as a light waveguide, andwherein the light waveguide is configured to guide light for a distance,towards a region with a connection pad.
 14. An image pickup device,comprising: an optically-transparent seal member that comprises a firstsurface, wherein the first surface is a polished surface and includes aconcave portion, wherein the concave portion includes an outer region asa light waveguide, and an inner region; an optical device coupled to asecond surface of the optically-transparent seal member, wherein thesecond surface is opposite to the first surface, wherein the opticaldevice includes an optical sensor with a light receiving surface; and aresin layer configured to fill a gap between the light receiving surfaceand the second surface.